fcb20n60f_f085 n-ch annel power trench ? mosfet ?2012 fairchild semiconductor corporation fcb20n60f_f085 rev. c1 www.fairchildsemi.com 1 fcb20n60f_f085 600v n-channe mosfet 600v, 20a, 190 m features ? typ r ds(on) = 171m at v gs = 10v, i d = 20a ? typ q g(tot) = 78nc at v gs = 10v, i d = 20a ? uis capability ? rohs compliant ? qualified to aec q101 description superfettm is, fairchild?s proprietary, new generation of high voltage mosfet family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. this advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. consequently, superfet is very suitable for various ac/dc power conversion in switching mode operation for system miniaturization and higher efficiency. mosfet maximum ratings t j = 25c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 600 v v gs gate to source voltage 30 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 20 a pulsed drain current see figure4 a e as single pulse avalanche energy (note 2) 217.8 mj p d power dissipation 405 w derate above 25 o c2.7w/ o c t j , t stg operating and storage temperature -55 to + 150 o c r jc thermal resistance junction to case 0.37 o c/w r ja maximum thermal resistance junction to ambient (note 3) 43 o c/w package marking and ordering information device marking device package reel size tape width quantity fcb20n60f fcb20n60f_f085 to-263ab 330mm 24mm 800 units notes: 1: current is limited by bondwire configuration. 2: starting t j = 25c, l = 10mh, i as = 6.6a, v dd = 100v during inductor charging and v dd = 0v during time in avalanche 3: r ja is the sum of the junction-to-case and case-to-ambient thermal re sistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. g s d d g s to-263ab fdb series for ? current ? package ? drawing, ? please ? refer ? to ? the ? fairchild ? website ? at ? www.fairchildsemi.com/packaging march 2012
fcb20n60f_f085 rev. c1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 600 - - v i dss drain to source leakage current v ds = 600v, t j = 25 o c --1 a v gs = 0v t j = 150 o c(note 4) - - 500 i gss gate to source leakage current v gs = 30v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 3.0 4.29 5.0 v r ds(on) drain to source on resistance i d = 20a, v gs = 10v t j = 25 o c - 171 195 m t j = 150 o c(note 4) - 444 511 m c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 2305 - pf c oss output capacitance - 1310 - pf c rss reverse transfer capacitance - 105 - pf r g gate resistance f = 1mhz - 0.95 - q g(tot) total gate charge v gs = 0 to 10v v dd = 300v i d = 20a - 78 102 nc q g(th) threshold gate charge v gs = 0 to 2v - 6.6 8.6 nc q gs gate to source gate charge - 13.8 - nc q gd gate to drain ?miller? charge - 41.5 - nc switching characteristics drain-source diode characteristics notes: 4: the maximum value is specified by design at tj = 150c. product is not tested to this condition in production. t on turn-on time v dd = 300v, i d = 20a, v gs = 10v, r gs = 25 - - 176 ns t d(on) turn-on delay time - 43 - ns t r rise time - 66 - ns t d(off) turn-off delay time - 211 - ns t f fall time - 42 - ns t off turn-off time - - 403 ns v sd source to drain diode voltage i sd = 20a, v gs = 0v - - 1.4 v t rr reverse recovery time i f = 20a, v dd = 480v di sd /dt = 100a/ s - 163 - ns q rr reverse recovery charge - 1285 - nc fcb20n60f_f085 n-ch annel power trench ? mosfet 0
www.fairchildsemi.com 3 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature ( o c ) figure 2. maximum continuous drain current vs case temperature 25 50 75 100 125 150 175 0 5 10 15 20 25 30 current l imit ed by pack age v gs = 10v i d , drain current (a) t c , case temperature( o c) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 si ngle pul se d = 0.50 0. 20 0. 10 0. 05 0. 02 0. 01 normalized thermal imp ed ance, z t jc t, rectangular pulse duration(s) dut y cyc le - desc end ing order notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 v gs = 10v single pulse i dm , peak curren t (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows: fcb20n60f_f085 n-ch annel power trench ? mosfet fcb20n60f_f085 rev. c1
www.fairchildsemi.com 4 figure 5. 11 01 0 01 0 0 0 0.01 0.1 1 10 100 limited by package 100us 1ms 10ms i d , drain cur rent (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds( o n) single pulse t j = ma x rated t c = 2 5 o c dc forward bias safe operating area 1e-3 0.01 0.1 1 10 1 10 10 0 st arting t j = 150 o c starti ng t j = 25 o c i as , avalanche current (a) t av , ti me in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 24681 0 1 10 10 0 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0. 5% max v dd = 20v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.0 0.2 0.4 0.6 0.8 1 .0 1.2 1.4 1.6 0.001 10 100 t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse d ra in cur rent (a) v sd , body diode forward volt age (v) forward diode characteristics figure 9. 0.1 1 10 1 10 100 6v v gs 15v top 10v 8v 7v 6.5v 6v 5.5v bottom 80 p s pulse width tj =25c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 10. 0.1 1 10 1 10 100 5.5v i d , drain current (a) v ds , drain to source voltage (v) v gs 15v top 10v 8v 7v 6.5v 6v 5.5v bottom 80 p s pulse width tj=175c saturation characteristics typical characteristics fcb20n60f_f085 n-ch annel power trench ? mosfet fcb20n60f_f085 rev. c1
www.fairchildsemi.com 5 figure 11. 5678910 0 200 400 600 800 10 00 i d = 20 a pulse duration = 80 p s dut y cycl e = 0. 5% max r ds(o n) , drain to source on-resistance (m : ) v gs , gate to source voltage (v) t j = 25 o c t j = 175 o c rdson vs gate voltage figure 12. normalized rdson vs junction te mperature -80 -40 0 40 80 120 160 200 0.6 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 pulse duration = 80 p s duty c ycle = 0.5% max i d = 2 0a v gs = 10v normalized dra in to source on-resistance t j , junction temperature ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0.4 0.6 0.8 1.0 1.2 v gs = v ds i d = 2 50 p a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs temperature figure 14. -80-40 0 40 80120160200 0.8 0.9 1.0 1.1 1.2 i d = 1ma nor malized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs junction temperature figure 15. 0.1 1 10 40 1 10 100 10 00 100 00 f = 1 mhz v gs = 0v c rs s c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 16. 020406080 0 2 4 6 8 10 i d = 20a v dd = 240 v v dd = 300v v dd = 360v q g , gate charge( nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics fcb20n60f_f085 n-ch annel power trench ? mosfet fcb20n60f_f085 rev. c1
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* serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing de lays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages cu stomers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our custom ers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ? 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